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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD636 DESCRIPTION *DC Current Gain : hFE = 40(Min.)@ IC= -25mA *Collector-Emitter Breakdown Voltage: V(BR)CEO= -60V(Min.) *Complement to Type BD635 APPLICATIONS *Designed for amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ Ta=25 w w scs .i w VALUE -60 -60 -5 -2 -5 -0.3 2 UNIT V .cn mi e V V A A A PC Collector Power Dissipation @ TC=25 TJ Tstg Junction Temperature Storage Temperature Range 30 150 -55~150 W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BD636 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 -60 V V(BR)CBO Collector-Base Breakdown Voltage IC= -0.1mA; IE= 0 -60 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A B -0.6 V VBE(on) Base-Emitter On Voltage IC= -1A; VCE= -2V ICES Collector Cutoff Current hFE-1 DC Current Gain hFE-2 DC Current Gain w w w. sem isc VCE= -60V; VBE= 0 IC= -25mA; VCE= -2V IC= -1A; VCE= -2V .cn i -1.3 V -0.2 mA 40 25 isc Websitewww.iscsemi.cn 2 |
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